NP90N03VUG-E1-AY
MOSFET N-CH 30V 90A TO252Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation NP90N03VUG-E1-AY is a 30V N-Channel Power MOSFET designed for demanding applications. This device features a low on-resistance of 3.2mOhm at 45A and 10V, facilitating efficient power transfer. With a continuous drain current capability of 90A (Tc) and a maximum junction temperature of 175°C, it is suitable for high-power switching in automotive and industrial sectors. The NP90N03VUG-E1-AY is housed in a TO-252 (DPAK) surface-mount package, offering a compact footprint and robust thermal performance with a power dissipation of 105W (Tc). Key electrical parameters include a gate charge of 135 nC at 10V and an input capacitance of 7500 pF at 25V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta), 105W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252 |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 135 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7500 pF @ 25 V |
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