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NP90N03VLG-E1-AY

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NP90N03VLG-E1-AY

MOSFET N-CH 30V 90A TO252

Manufacturer: Renesas Electronics Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Renesas Electronics Corporation NP90N03VLG-E1-AY is an N-Channel power MOSFET designed for demanding applications. This component features a maximum drain-source voltage (Vdss) of 30V and can handle a continuous drain current (Id) of 90A at 25°C (Tc). With a low on-resistance (Rds On) of 3.2mOhm at 45A and 10V Vgs, it offers efficient power transfer. The device operates across a wide temperature range up to 175°C (TJ) and supports gate drive voltages from 4.5V to 10V, with a maximum Vgs of ±20V. Key parameters include a gate charge (Qg) of 135 nC at 10V and input capacitance (Ciss) of 7500 pF at 25V. Power dissipation is rated at 1.2W (Ta) and 105W (Tc). The NP90N03VLG-E1-AY is housed in a TO-252-3, DPAK surface-mount package and is supplied on tape and reel. This MOSFET is suitable for use in automotive, industrial power supply, and motor control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Rds On (Max) @ Id, Vgs3.2mOhm @ 45A, 10V
FET Feature-
Power Dissipation (Max)1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageTO-252
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7500 pF @ 25 V

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