NP89N055MUK-S18-AY
MOSFET N-CH 55V 90A TO220-3Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation NP89N055MUK-S18-AY is a high-performance N-Channel MOSFET designed for demanding applications. This device features a low on-resistance of 4.4 mOhm at 45A and 10V Vgs, with a continuous drain current capability of 90A at 25°C (Tc). The drain-to-source voltage is rated at 55V, and it operates within a temperature range of -55°C to 175°C (TJ). Key parameters include a gate charge of 102 nC at 10V and input capacitance of 6000 pF at 25V. The power dissipation is 1.8W (Ta) and 147W (Tc). Packaged in a standard TO-220-3 through-hole configuration, this MOSFET is suitable for power switching and control applications in industries such as industrial automation, power supplies, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 147W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 102 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 25 V |
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