NP88N075MUE-S18-AY
MOSFET N-CH 75V 88A TO220-3Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation NP88N075MUE-S18-AY is an N-Channel Power MOSFET designed for high-performance switching applications. This component features a maximum drain-source voltage (Vdss) of 75 V and a continuous drain current (Id) of 88 A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 8.5 mOhm at 44 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 230 nC at 10 V and input capacitance (Ciss) of 12300 pF at 25 V. The device operates at an extended temperature range up to 175°C (TJ) and offers significant power dissipation capabilities of 288 W (Tc). Packaged in a TO-220-3 configuration for through-hole mounting, this MOSFET is suitable for demanding applications in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 88A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 44A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 288W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12300 pF @ 25 V |