NP88N075KUE-E1-AY
MOSFET N-CH 75V 88A TO263Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation NP88N075KUE-E1-AY is a surface mount N-Channel MOSFET designed for high-current applications. This component features a Drain-to-Source Voltage (Vdss) of 75 V and a continuous Drain current (Id) of 88 A at 25°C (Tc). The Rds(on) is specified at a maximum of 8.5 mOhm at 44 A and 10 V gate drive. Key parameters include a Gate Charge (Qg) of 230 nC at 10 V and an Input Capacitance (Ciss) of 12300 pF at 25 V. The device is housed in a TO-263-3, D2PAK package and can operate at a maximum junction temperature of 175°C. Power dissipation is rated at 1.8 W (Ta) and 288 W (Tc). This MOSFET is suitable for use in power supply, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 88A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 44A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 288W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12300 pF @ 25 V |