NP84N075KUE-E1-AY
MOSFET N-CH 75V 84A TO263Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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The Renesas Electronics Corporation NP84N075KUE-E1-AY is an N-channel power MOSFET designed for high-performance applications. This component features a 75V drain-to-source voltage (Vdss) and a continuous drain current (Id) capability of 84A at 25°C. With a maximum on-resistance (Rds On) of 12.5mOhm at 42A and 10V gate drive, it offers efficient power handling. The device supports a gate drive voltage up to 10V and has a gate charge (Qg) of 150 nC at 10V. Input capacitance (Ciss) is rated at a maximum of 8400 pF at 25V. The NP84N075KUE-E1-AY operates at a junction temperature up to 175°C and offers significant power dissipation capabilities of 200W at the case and 1.8W ambient. Packaged in a TO-263-3, D2PAK surface mount configuration, this MOSFET is suitable for use in industrial, automotive, and power supply sectors where robust switching performance is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 84A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.5mOhm @ 42A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8400 pF @ 25 V |