NP82N04PDG-E1-AY
MOSFET N-CH 40V 82A TO263Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation NP82N04PDG-E1-AY is an N-Channel Power MOSFET designed for demanding applications. This component features a 40V drain-to-source voltage (Vdss) and a continuous drain current (Id) capability of 82A at 25°C (Tc). The low on-resistance of 3.5mOhm at 41A and 10V (Vgs) minimizes conduction losses, while the 143W (Tc) maximum power dissipation in the TO-263 package supports high-power handling. With a maximum junction temperature of 175°C and a low gate charge of 150 nC at 10V, this device is suitable for power conversion, motor control, and power management circuits across automotive and industrial sectors. The NP82N04PDG-E1-AY is supplied in a TO-263-3, D2PAK package, available on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 82A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 41A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 143W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-263 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9000 pF @ 25 V |