NP82N04MUG-S18-AY
MOSFET N-CH 40V 82A TO220-3Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation NP82N04MUG-S18-AY is an N-Channel MOSFET designed for high-current switching applications. This component features a continuous drain current of 82A at 25°C (Tc) and a drain-to-source voltage of 40V. The device boasts a low on-resistance of 4.2mOhm maximum at 41A and 10V gate-source voltage. With a maximum junction temperature of 175°C, it offers a power dissipation of 143W (Tc) in the TO-220-3 package. Key parameters include a gate charge of 160 nC (max) at 10V and input capacitance (Ciss) of 9750 pF (max) at 25V. This through-hole mounted MOSFET is suitable for demanding applications in sectors such as industrial power supplies and automotive electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 82A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 41A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 143W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9750 pF @ 25 V |
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