NP82N04MLG-S18-AY
MOSFET N-CH 40V 82A TO220-3Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation NP82N04MLG-S18-AY is an N-Channel MOSFET designed for demanding applications. This component features a drain-to-source voltage (Vdss) of 40 V and a continuous drain current (Id) of 82 A at 25°C (Tc). The low on-resistance (Rds On) of 4.2 mOhm at 41 A and 10 V gate-source voltage (Vgs) facilitates efficient power transfer. With a maximum junction temperature of 175°C and a continuous drain current capability of 82 A at the case, this MOSFET is suitable for high-power switching. The input capacitance (Ciss) is 9000 pF at 25 V, and gate charge (Qg) is 150 nC at 10 V. The device is housed in a TO-220-3 through-hole package and is supplied in tubes. This component finds application in power supplies, industrial automation, and electric vehicle systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 82A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 41A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 143W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9000 pF @ 25 V |
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