NP82N04MDG-S18-AY
MOSFET N-CH 40V 82A TO220-3Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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The Renesas Electronics Corporation NP82N04MDG-S18-AY is an N-Channel Power MOSFET featuring a 40 V drain-source voltage and a continuous drain current of 82 A at 25°C (Tc). This device offers a low on-resistance of 4.2 mOhm at 41 A and 10 V (Vgs). With a maximum gate charge of 150 nC at 10 V (Vgs), it is designed for efficient switching applications. The TO-220-3 package facilitates through-hole mounting, and the component operates reliably up to a junction temperature of 175°C. Power dissipation is rated at 1.8 W (Ta) and 143 W (Tc). This automotive-grade MOSFET is qualified to AEC-Q101 standards.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 82A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 41A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 143W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Grade | Automotive |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9000 pF @ 25 V |
| Qualification | AEC-Q101 |
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