NP82N03PUG-E1-AY
MOSFET N-CH 30V 82A TO263Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation NP82N03PUG-E1-AY is a 30V N-Channel Power MOSFET designed for demanding power management applications. This component features a low on-resistance (Rds(on)) of 2.8mOhm at 41A and 10V Vgs, enabling efficient current handling up to 82A continuous drain current at 25°C. With a maximum junction temperature of 175°C and substantial power dissipation capabilities of 143W (Tc), it is suitable for high-power switching and linear applications. The device is housed in a TO-263 (D2PAK) surface-mount package, facilitating robust thermal management. Key electrical parameters include a gate charge (Qg) of 160 nC at 10V and input capacitance (Ciss) of 9080 pF at 25V. This MOSFET is commonly utilized in industrial power supplies, automotive systems, and power conversion circuits requiring high current density and thermal performance.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 82A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 41A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 143W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9080 pF @ 25 V |
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