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NP80N06PLG-E1B-AY

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NP80N06PLG-E1B-AY

MOSFET N-CH 60V 80A TO263

Manufacturer: Renesas Electronics Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Renesas Electronics Corporation NP80N06PLG-E1B-AY is a high-performance N-Channel Power MOSFET designed for demanding applications. This TO-263 packaged device features a drain-source breakdown voltage of 60V and a continuous drain current capability of 80A at 25°C (Tc). With a low on-resistance (Rds On) of 8.3mOhm at 40A and 10V Vgs, it minimizes conduction losses. The MOSFET offers a gate threshold voltage (Vgs(th)) of 2.5V (max) at 250µA and a maximum gate charge (Qg) of 128 nC at 10V. Its high operating junction temperature capability of 175°C (TJ) and robust power dissipation of 115W (Tc) make it suitable for power management solutions in industrial, automotive, and consumer electronics sectors. The device supports a wide gate drive voltage range from 4.5V to 10V.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs8.3mOhm @ 40A, 10V
FET Feature-
Power Dissipation (Max)1.8W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageTO-263
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6900 pF @ 25 V

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