NP80N06PLG-E1B-AY
MOSFET N-CH 60V 80A TO263Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation NP80N06PLG-E1B-AY is a high-performance N-Channel Power MOSFET designed for demanding applications. This TO-263 packaged device features a drain-source breakdown voltage of 60V and a continuous drain current capability of 80A at 25°C (Tc). With a low on-resistance (Rds On) of 8.3mOhm at 40A and 10V Vgs, it minimizes conduction losses. The MOSFET offers a gate threshold voltage (Vgs(th)) of 2.5V (max) at 250µA and a maximum gate charge (Qg) of 128 nC at 10V. Its high operating junction temperature capability of 175°C (TJ) and robust power dissipation of 115W (Tc) make it suitable for power management solutions in industrial, automotive, and consumer electronics sectors. The device supports a wide gate drive voltage range from 4.5V to 10V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.3mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 115W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-263 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 128 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6900 pF @ 25 V |
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