NP80N055PDG-E1B-AY
MOSFET N-CH 55V 80A TO263Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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The Renesas Electronics Corporation NP80N055PDG-E1B-AY is a high-performance N-channel power MOSFET designed for demanding applications. Featuring a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 80A at 25°C (Tc), this component offers robust power handling capabilities. Its low on-resistance (Rds On) of 6.6mOhm at 40A and 10V ensures efficient power transfer with minimal losses. The device boasts a high junction temperature rating of 175°C, supported by a maximum power dissipation of 115W (Tc). Packaged in a surface-mount TO-263-3, D2PAK, it is suitable for automated assembly processes. Key electrical characteristics include a gate charge (Qg) of 135 nC at 10V and input capacitance (Ciss) of 6900 pF at 25V. This MOSFET is commonly utilized in power supply units, automotive systems, and industrial motor control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.6mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 115W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-263 |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 135 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6900 pF @ 25 V |
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