NP80N04PUG-E1B-AY
MOSFET N-CH 40V 80A TO263Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation NP80N04PUG-E1B-AY is an N-Channel Power MOSFET designed for high-current switching applications. This component features a Drain-to-Source Voltage (Vdss) of 40V and supports a continuous drain current (Id) of 80A at 25°C (Tc). The low on-resistance, specified as 4.5mOhm maximum at 40A and 10V gate drive, contributes to efficient power delivery. With a maximum junction temperature of 175°C and a continuous drain current rating of 80A (Tc), it is suitable for demanding thermal environments. The TO-263-3, D2PAK package facilitates surface mounting and thermal management. Key electrical parameters include a gate charge (Qg) of 135 nC max at 10V and input capacitance (Ciss) of 7350 pF max at 25V. This MOSFET is utilized in various industrial sectors, including power supplies, automotive systems, and motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 115W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 135 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7350 pF @ 25 V |
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