NP80N04PLG-E1B-AY
MOSFET N-CH 40V 80A TO263Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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The Renesas Electronics Corporation NP80N04PLG-E1B-AY is a surface mount N-Channel Power MOSFET designed for high-current applications. Featuring a Vds of 40V and a continuous drain current (Id) of 80A at 25°C (Tc), this component boasts a low Rds(on) of 4.5mOhm at 40A and 10V drive. The device is housed in a TO-263-3, D2PAK package, facilitating efficient thermal management with a maximum power dissipation of 115W (Tc). Key electrical parameters include a gate charge (Qg) of 135 nC at 10V and input capacitance (Ciss) of 6900 pF at 25V. This MOSFET is suitable for demanding applications across various industries including automotive, industrial power control, and power supply units. The operating junction temperature reaches up to 175°C, and it is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 115W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-263 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 135 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6900 pF @ 25 V |
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