NP80N04PDG-E1B-AY
MOSFET N-CH 40V 80A TO263-3Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation NP80N04PDG-E1B-AY is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 80A at 25°C (Tc). With a low on-resistance of 4.5mOhm at 40A and 10V (Vgs), it offers efficient power transfer. The device boasts a maximum junction temperature of 175°C and a power dissipation of 1.8W (Ta) and 115W (Tc). Key parameters include a gate charge (Qg) of 135 nC at 10V and input capacitance (Ciss) of 6900 pF at 25V. Packaged in a TO-263-3 (D2PAK) surface mount configuration, this MOSFET is suitable for use in power supply, automotive, and industrial automation sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 115W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-263-3 |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 135 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6900 pF @ 25 V |
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