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NP80N04PDG-E1B-AY

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NP80N04PDG-E1B-AY

MOSFET N-CH 40V 80A TO263-3

Manufacturer: Renesas Electronics Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Renesas Electronics Corporation NP80N04PDG-E1B-AY is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 80A at 25°C (Tc). With a low on-resistance of 4.5mOhm at 40A and 10V (Vgs), it offers efficient power transfer. The device boasts a maximum junction temperature of 175°C and a power dissipation of 1.8W (Ta) and 115W (Tc). Key parameters include a gate charge (Qg) of 135 nC at 10V and input capacitance (Ciss) of 6900 pF at 25V. Packaged in a TO-263-3 (D2PAK) surface mount configuration, this MOSFET is suitable for use in power supply, automotive, and industrial automation sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs4.5mOhm @ 40A, 10V
FET Feature-
Power Dissipation (Max)1.8W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageTO-263-3
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6900 pF @ 25 V

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