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NP80N04NHE-S18-AY

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NP80N04NHE-S18-AY

MOSFET N-CH 40V 80A TO262

Manufacturer: Renesas Electronics Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Renesas Electronics Corporation NP80N04NHE-S18-AY is an N-Channel MOSFET designed for power management applications. This component features a drain-to-source voltage of 40V and a continuous drain current capability of 80A at 25°C (Tc). The Rds On is specified at a maximum of 8mOhm at 40A and 10V, with a gate charge (Qg) of 60nC at 10V. Input capacitance (Ciss) is 3300pF at 25V. The device offers a low thermal resistance, allowing for a maximum power dissipation of 120W at 25°C (Tc). It operates across a wide temperature range of 175°C (TJ). The component is housed in a TO-262 package, suitable for through-hole mounting. This MOSFET is commonly utilized in industrial automation, automotive systems, and power supply designs.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Mounting TypeThrough Hole
Operating Temperature175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs8mOhm @ 40A, 10V
FET Feature-
Power Dissipation (Max)1.8W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-262
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3300 pF @ 25 V

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