NP80N04NHE-S18-AY
MOSFET N-CH 40V 80A TO262Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation NP80N04NHE-S18-AY is an N-Channel MOSFET designed for power management applications. This component features a drain-to-source voltage of 40V and a continuous drain current capability of 80A at 25°C (Tc). The Rds On is specified at a maximum of 8mOhm at 40A and 10V, with a gate charge (Qg) of 60nC at 10V. Input capacitance (Ciss) is 3300pF at 25V. The device offers a low thermal resistance, allowing for a maximum power dissipation of 120W at 25°C (Tc). It operates across a wide temperature range of 175°C (TJ). The component is housed in a TO-262 package, suitable for through-hole mounting. This MOSFET is commonly utilized in industrial automation, automotive systems, and power supply designs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 120W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3300 pF @ 25 V |
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