NP80N04MLG-S18-AY
MOSFET N-CH 40V 80A TO220Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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The Renesas Electronics Corporation NP80N04MLG-S18-AY is an N-Channel MOSFET designed for high-current applications. This component features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 80A at 25°C (Tc). It offers a low on-resistance (Rds On) of 4.8mOhm at 40A and 10V gate-source voltage. The device is housed in a standard TO-220-3 package, suitable for through-hole mounting. With a maximum junction temperature of 175°C, it provides a power dissipation of 115W at 25°C (Tc) and 1.8W at 25°C (Ta). Key electrical characteristics include a gate charge (Qg) of 135 nC (Max) at 10V and input capacitance (Ciss) of 6900 pF (Max) at 25V. This MOSFET is commonly utilized in power supply units, automotive electronics, and industrial motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 115W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 135 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6900 pF @ 25 V |
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