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NP80N04MLG-S18-AY

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NP80N04MLG-S18-AY

MOSFET N-CH 40V 80A TO220

Manufacturer: Renesas Electronics Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Renesas Electronics Corporation NP80N04MLG-S18-AY is an N-Channel MOSFET designed for high-current applications. This component features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 80A at 25°C (Tc). It offers a low on-resistance (Rds On) of 4.8mOhm at 40A and 10V gate-source voltage. The device is housed in a standard TO-220-3 package, suitable for through-hole mounting. With a maximum junction temperature of 175°C, it provides a power dissipation of 115W at 25°C (Tc) and 1.8W at 25°C (Ta). Key electrical characteristics include a gate charge (Qg) of 135 nC (Max) at 10V and input capacitance (Ciss) of 6900 pF (Max) at 25V. This MOSFET is commonly utilized in power supply units, automotive electronics, and industrial motor control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs4.8mOhm @ 40A, 10V
FET Feature-
Power Dissipation (Max)1.8W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageTO-220
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6900 pF @ 25 V

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