NP80N04MHE-S18-AY
MOSFET N-CH 40V 80A TO220Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas Electronics Corporation NP80N04MHE-S18-AY is an N-Channel power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 40 V and a continuous drain current (Id) of 80 A at 25°C (Tc). The low on-resistance (Rds On) of 8 mOhm at 40 A and 10 V Vgs ensures efficient power transfer. The device exhibits a gate charge (Qg) of 60 nC maximum at 10 V and input capacitance (Ciss) of 3300 pF maximum at 25 V. With a maximum junction temperature of 175°C, it offers robust performance in various operating environments. Power dissipation is rated at 1.8 W (Ta) and 120 W (Tc). The NP80N04MHE-S18-AY is packaged in a standard TO-220-3 through-hole configuration, suitable for power supply units, automotive electronics, and industrial motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 120W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3300 pF @ 25 V |
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