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NP80N04MHE-S18-AY

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NP80N04MHE-S18-AY

MOSFET N-CH 40V 80A TO220

Manufacturer: Renesas Electronics Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Renesas Electronics Corporation NP80N04MHE-S18-AY is an N-Channel power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 40 V and a continuous drain current (Id) of 80 A at 25°C (Tc). The low on-resistance (Rds On) of 8 mOhm at 40 A and 10 V Vgs ensures efficient power transfer. The device exhibits a gate charge (Qg) of 60 nC maximum at 10 V and input capacitance (Ciss) of 3300 pF maximum at 25 V. With a maximum junction temperature of 175°C, it offers robust performance in various operating environments. Power dissipation is rated at 1.8 W (Ta) and 120 W (Tc). The NP80N04MHE-S18-AY is packaged in a standard TO-220-3 through-hole configuration, suitable for power supply units, automotive electronics, and industrial motor control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs8mOhm @ 40A, 10V
FET Feature-
Power Dissipation (Max)1.8W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3300 pF @ 25 V

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