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NP80N04KHE-E1-AY

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NP80N04KHE-E1-AY

MOSFET N-CH 40V 80A TO263

Manufacturer: Renesas Electronics Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Renesas Electronics Corporation NP80N04KHE-E1-AY is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 40V and a continuous Drain Current (Id) of 80A at 25°C (Tc). With a low on-resistance (Rds On) of 8mOhm at 40A and 10V Vgs, it minimizes conduction losses. The device operates with a gate drive voltage of 10V and has a maximum Vgs of ±20V. Key parameters include a gate charge (Qg) of 60 nC at 10V and input capacitance (Ciss) of 3300 pF at 25V. It offers a maximum junction temperature of 175°C and power dissipation of 1.8W (Ta) or 120W (Tc). The NP80N04KHE-E1-AY is supplied in a TO-263-3, D2PAK surface mount package, suitable for high-power switching and power management in automotive and industrial sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs8mOhm @ 40A, 10V
FET Feature-
Power Dissipation (Max)1.8W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3300 pF @ 25 V

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