NP80N04KHE-E1-AY
MOSFET N-CH 40V 80A TO263Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation NP80N04KHE-E1-AY is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 40V and a continuous Drain Current (Id) of 80A at 25°C (Tc). With a low on-resistance (Rds On) of 8mOhm at 40A and 10V Vgs, it minimizes conduction losses. The device operates with a gate drive voltage of 10V and has a maximum Vgs of ±20V. Key parameters include a gate charge (Qg) of 60 nC at 10V and input capacitance (Ciss) of 3300 pF at 25V. It offers a maximum junction temperature of 175°C and power dissipation of 1.8W (Ta) or 120W (Tc). The NP80N04KHE-E1-AY is supplied in a TO-263-3, D2PAK surface mount package, suitable for high-power switching and power management in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 120W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3300 pF @ 25 V |