NP80N03MLE-S18-AY
MOSFET N-CH 30V 80A TO220Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation NP80N03MLE-S18-AY is an N-Channel MOSFET with a 30V drain-source breakdown voltage. This device offers a continuous drain current capability of 80A at 25°C (Tc) and a low on-resistance of 7mOhm at 40A and 10V Vgs. Key parameters include a gate charge (Qg) of 72nC (max) at 10V and input capacitance (Ciss) of 3900pF (max) at 25V. The component features a maximum junction temperature of 175°C and supports power dissipation of 1.8W (Ta) and 120W (Tc). Packaged in a TO-220-3 through-hole configuration, this MOSFET is suitable for applications in automotive and industrial power control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 120W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 25 V |
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