NP70N10KUF-E1-AY
MOSFET N-CH 100V 70A TO263Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas Electronics Corporation NP70N10KUF-E1-AY is an N-Channel power MOSFET designed for high-efficiency power conversion applications. This device features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 70A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 20mOhm at 35A and 10V gate drive. Key parameters include a gate charge (Qg) of 75 nC (max) at 10V and an input capacitance (Ciss) of 3750 pF (max) at 25V. The MOSFET operates at an extended junction temperature of 175°C and offers a maximum power dissipation of 120W (Tc). It is packaged in a surface-mount TO-263-3, D2PAK (2 leads + tab) package, supplied on tape and reel. This component is suitable for use in industrial power supplies, automotive electronics, and power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 120W (Tc) |
| Vgs(th) (Max) @ Id | 3.3V @ 250µA |
| Supplier Device Package | TO-263 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3750 pF @ 25 V |