NP60N04NUK-S18-AY
MOSFET N-CH 40V 60A TO262-3Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation NP60N04NUK-S18-AY is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 40 V and a continuous drain current (Id) of 60A at 25°C (Tc). The Rds On is specified at a maximum of 4.3 mOhm at 30A and 10V gate-source voltage. With a gate charge (Qg) of 63 nC at 10V and input capacitance (Ciss) of 3680 pF at 25V, this MOSFET offers efficient switching characteristics. The device supports a maximum gate-source voltage (Vgs) of ±20V and has a threshold voltage (Vgs(th)) of 4V at 250µA. It is housed in a TO-262-3 package, a through-hole mounting type, and operates at an ambient temperature of up to 175°C (TJ). Power dissipation is rated at 1.8W (Ta) and 105W (Tc). This component is suitable for use in industrial and automotive power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Full Pack, I2PAK |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 105W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3680 pF @ 25 V |
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