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NP60N04NUK-S18-AY

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NP60N04NUK-S18-AY

MOSFET N-CH 40V 60A TO262-3

Manufacturer: Renesas Electronics Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Renesas Electronics Corporation NP60N04NUK-S18-AY is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 40 V and a continuous drain current (Id) of 60A at 25°C (Tc). The Rds On is specified at a maximum of 4.3 mOhm at 30A and 10V gate-source voltage. With a gate charge (Qg) of 63 nC at 10V and input capacitance (Ciss) of 3680 pF at 25V, this MOSFET offers efficient switching characteristics. The device supports a maximum gate-source voltage (Vgs) of ±20V and has a threshold voltage (Vgs(th)) of 4V at 250µA. It is housed in a TO-262-3 package, a through-hole mounting type, and operates at an ambient temperature of up to 175°C (TJ). Power dissipation is rated at 1.8W (Ta) and 105W (Tc). This component is suitable for use in industrial and automotive power management systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-262-3 Full Pack, I2PAK
Mounting TypeThrough Hole
Operating Temperature175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Rds On (Max) @ Id, Vgs4.3mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)1.8W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-262-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3680 pF @ 25 V

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