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NP60N04MUK-S18-AY

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NP60N04MUK-S18-AY

MOSFET N-CH 40V 60A TO220

Manufacturer: Renesas Electronics Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Renesas Electronics Corporation NP60N04MUK-S18-AY is a 40V N-Channel Power MOSFET designed for demanding applications. This device features a low on-resistance of 4.3mOhm at 30A and 10V Vgs, facilitating efficient power delivery. With a continuous drain current capability of 60A (Tc) and a maximum junction temperature of 175°C, it is suitable for high-power applications. The TO-220-3 Full Pack through-hole package offers robust thermal performance with a power dissipation of 105W (Tc). Key electrical characteristics include a gate charge (Qg) of 63 nC at 10V and input capacitance (Ciss) of 3680 pF at 25V. This component is widely utilized in power supply units, automotive systems, and industrial motor control.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Rds On (Max) @ Id, Vgs4.3mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)1.8W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3680 pF @ 25 V

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