NP60N04MUK-S18-AY
MOSFET N-CH 40V 60A TO220Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation NP60N04MUK-S18-AY is a 40V N-Channel Power MOSFET designed for demanding applications. This device features a low on-resistance of 4.3mOhm at 30A and 10V Vgs, facilitating efficient power delivery. With a continuous drain current capability of 60A (Tc) and a maximum junction temperature of 175°C, it is suitable for high-power applications. The TO-220-3 Full Pack through-hole package offers robust thermal performance with a power dissipation of 105W (Tc). Key electrical characteristics include a gate charge (Qg) of 63 nC at 10V and input capacitance (Ciss) of 3680 pF at 25V. This component is widely utilized in power supply units, automotive systems, and industrial motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 105W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3680 pF @ 25 V |
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