NP60N04MUG-S18-AY
MOSFET N-CH 40V 60A TO220Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation NP60N04MUG-S18-AY is an N-Channel Power MOSFET designed for demanding applications. This component features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 60A at 25°C (Tc). The low on-resistance (Rds On) of 6.3mOhm at 30A and 10V gate-source voltage (Vgs) ensures efficient power transfer. With a maximum junction temperature of 175°C (TJ) and a substantial power dissipation of 88W (Tc), this TO-220 packaged device is suitable for high-power switching and motor control applications. Key electrical characteristics include a gate charge (Qg) of 60 nC at 10V and input capacitance (Ciss) of 3200 pF at 25V. This MOSFET is manufactured using advanced Metal Oxide technology.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.3mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 88W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3200 pF @ 25 V |