NP60N03SUG-E1-AY
MOSFET N-CH 30V 60A TO252Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation NP60N03SUG-E1-AY is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 60A at 25°C (Tc). Its low on-resistance (Rds On) of 3.8mOhm at 30A and 10V gate-source voltage (Vgs) minimizes conduction losses. The device offers a maximum power dissipation of 105W (Tc) and operates at temperatures up to 175°C (TJ). Key parameters include a gate charge (Qg) of 135 nC at 10V and input capacitance (Ciss) of 7500 pF at 25V. The NP60N03SUG-E1-AY is housed in a TO-252-3, DPAK surface-mount package and is supplied on tape and reel. This MOSFET is suitable for use in automotive systems, industrial power supplies, and battery management applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta), 105W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252 (MP-3ZK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 135 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7500 pF @ 25 V |