NP60N03KUG-E1-AY
MOSFET N-CH 30V 60A TO263Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas Electronics Corporation NP60N03KUG-E1-AY is a surface mount N-channel Power MOSFET designed for demanding applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 60A at 25°C (Tc). The low on-resistance of 4.8mOhm at 30A and 10V Vgs, coupled with a maximum gate charge of 93 nC, ensures efficient switching performance. With a maximum junction temperature of 175°C and a high power dissipation capacity of 88W (Tc), it is suitable for power supply, automotive, and industrial control systems. The TO-263-3, D2PAK package offers robust thermal management for high-power density designs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 88W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 93 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5300 pF @ 25 V |