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NP60N03KUG-E1-AY

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NP60N03KUG-E1-AY

MOSFET N-CH 30V 60A TO263

Manufacturer: Renesas Electronics Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Renesas Electronics Corporation NP60N03KUG-E1-AY is a surface mount N-channel Power MOSFET designed for demanding applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 60A at 25°C (Tc). The low on-resistance of 4.8mOhm at 30A and 10V Vgs, coupled with a maximum gate charge of 93 nC, ensures efficient switching performance. With a maximum junction temperature of 175°C and a high power dissipation capacity of 88W (Tc), it is suitable for power supply, automotive, and industrial control systems. The TO-263-3, D2PAK package offers robust thermal management for high-power density designs.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Rds On (Max) @ Id, Vgs4.8mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)1.8W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5300 pF @ 25 V

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