NP55N055SUG-E1-AY
MOSFET N-CH 55V 55A TO252Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas Electronics Corporation NP55N055SUG-E1-AY is an N-Channel Power MOSFET designed for demanding applications. This device boasts a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) capability of 55A at 25°C (Tc). With a low on-resistance (Rds On) of 10mOhm at 28A and 10V, it minimizes conduction losses. The MOSFET features a high gate charge (Qg) of 90 nC at 10V and an input capacitance (Ciss) of 5250 pF at 25V. Operating at junction temperatures up to 175°C, it offers robust thermal performance with a maximum power dissipation of 77W (Tc). The surface mount TO-252-3 package facilitates efficient board assembly. This component is utilized in industrial power supplies, automotive electronics, and telecommunications infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 28A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta), 77W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-252 (MP-3ZK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5250 pF @ 25 V |