NP55N055SDG-E1-AY
MOSFET N-CH 55V 55A TO252Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation NP55N055SDG-E1-AY is an N-Channel Power MOSFET designed for demanding applications. This component features a 55V drain-source voltage and a continuous drain current capability of 55A at 25°C (Tc). With a low on-resistance of 9.5mOhm maximum at 28A and 10V gate-source voltage, it ensures efficient power switching. The device is rated for a maximum junction temperature of 175°C and offers a significant power dissipation of 77W (Tc). Packaged in a TO-252 (MP-3ZK) surface-mount configuration, it is supplied on tape and reel. Key parameters include a gate charge of 96 nC (max) at 10V and input capacitance of 4800 pF (max) at 25V. This MOSFET is suitable for use in power supply units, automotive systems, and industrial motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 28A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta), 77W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-252 (MP-3ZK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 96 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 25 V |