NP55N03SUG-E1-AY
MOSFET N-CH 30V 55A TO252Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation NP55N03SUG-E1-AY is a 30V N-Channel Power MOSFET designed for high-current applications. This device features a low on-resistance of 5mOhm at 28A and 10V Vgs, enabling efficient power transfer. With a continuous drain current capability of 55A (Tc) and a maximum junction temperature of 175°C, it is suitable for demanding thermal environments. The NP55N03SUG-E1-AY offers a substantial power dissipation of 77W (Tc) in a TO-252 Surface Mount package, facilitating thermal management in compact designs. Key electrical characteristics include a gate charge of 93 nC (Max) at 10V and an input capacitance of 5300 pF (Max) at 25V Vds. This component finds utility in power supply units and automotive systems. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 28A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta), 77W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252 (MP-3ZK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 93 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5300 pF @ 25 V |