NP48N055KLE-E1-AY
MOSFET N-CH 55V 48A TO263Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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The Renesas Electronics Corporation NP48N055KLE-E1-AY is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) capability of 48A at 25°C (Tc). With a maximum on-resistance (Rds On) of 17mOhm at 24A and 10V, it offers low conduction losses. The device supports a gate-source voltage (Vgs) range of ±20V, with a threshold voltage (Vgs(th)) of 2.5V (Max) at 250µA. Key electrical parameters include a maximum gate charge (Qg) of 60 nC at 10V and a maximum input capacitance (Ciss) of 3000 pF at 25V. The NP48N055KLE-E1-AY is housed in a TO-263-3, D2PAK package for surface mounting, enabling efficient thermal management with a maximum power dissipation of 85W (Tc). It operates reliably at junction temperatures up to 175°C and is supplied in Tape & Reel packaging. This MOSFET is suitable for use in power supply units, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 24A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 85W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-263 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 25 V |