NP40N10YDF-E1-AY
MOSFET N-CH 100V 40A 8HSONManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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The Renesas Electronics Corporation NP40N10YDF-E1-AY is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 40A at 25°C (Tc). With a low on-resistance (Rds On) of 25mOhm at 20A and 10V Vgs, it minimizes conduction losses. Key parameters include a Gate Charge (Qg) of 71 nC (max) at 10V and an Input Capacitance (Ciss) of 3150 pF (max) at 25V, facilitating efficient switching. The MOSFET offers a maximum operating junction temperature of 175°C and a power dissipation of 1W (Ta) or 120W (Tc). It is supplied in a compact 8-HSON (8-PowerLDFN) package, suitable for surface mounting and tape and reel packaging. This component finds application in automotive, industrial power supplies, and electric vehicle systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerLDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta), 120W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-HSON |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 71 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3150 pF @ 25 V |
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