NP40N10PDF-E1-AY
MOSFET N-CH 100V 40A TO263Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation NP40N10PDF-E1-AY is an N-Channel Power MOSFET designed for demanding applications. This component features a 100 V drain-source voltage and a continuous drain current of 40 A at 25°C (Tc). The device offers a low on-resistance of 27 mOhm maximum at 20 A and 10 V, with gate drive voltages ranging from 4.5 V to 10 V. Key parameters include a maximum gate charge of 71 nC at 10 V and an input capacitance (Ciss) of 3150 pF at 25 V. The NP40N10PDF-E1-AY is housed in a TO-263-3, D2PAK package for surface mounting, capable of operating at junction temperatures up to 175°C. Power dissipation is rated at 1.8 W ambient and 120 W case temperature. This MOSFET is suitable for use in power supply units and automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 120W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 71 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3150 pF @ 25 V |
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