NP40N055KLE-E1-AY
MOSFET N-CH 55V 40A TO263Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation NP40N055KLE-E1-AY is an N-Channel Power MOSFET designed for demanding applications. This component features a 55V drain-source breakdown voltage and a continuous drain current capability of 40A at 25°C (Tc). With a low on-resistance of 23mOhm at 20A and 10V Vgs, it minimizes conduction losses. The device boasts a high operating temperature of 175°C (TJ) and a power dissipation of 66W (Tc). Key electrical parameters include a gate charge (Qg) of 41 nC @ 5V and input capacitance (Ciss) of 1950 pF @ 25V. Packaged in a TO-263-3, D2PAK surface mount configuration, this MOSFET is suitable for power management, automotive systems, and industrial equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 66W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-263 |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1950 pF @ 25 V |
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