NP32N055SLE-E1-AY
MOSFET N-CH 55V 32A TO252Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation NP32N055SLE-E1-AY is a single N-Channel MOSFET designed for high-efficiency power switching applications. This component features a drain-source voltage (Vdss) of 55 V and a continuous drain current (Id) of 32 A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 24 mOhm at 16 A and 10 V, with a gate-source threshold voltage (Vgs(th)) of 2.5 V at 250 µA. It operates with drive voltages ranging from 4.5 V to 10 V and has a maximum gate-source voltage (Vgs(Max)) of ±20 V. The NP32N055SLE-E1-AY offers a maximum junction temperature of 175°C and can dissipate up to 66 W (Tc) or 1.2 W (Ta). Key electrical parameters include a gate charge (Qg) of 41 nC at 5 V and input capacitance (Ciss) of 2000 pF at 25 V. This MOSFET is supplied in a TO-252 (MP-3ZK) surface mount package, commonly used in automotive, industrial, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta), 66W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-252 (MP-3ZK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 25 V |