NP32N055SHE-E1-AY
MOSFET N-CH 55V 32A TO252Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas Electronics Corporation NP32N055SHE-E1-AY is an N-Channel Power MOSFET designed for demanding applications. This component features a 55V drain-source voltage and a continuous drain current capability of 32A at 25°C (Tc). The device offers a low on-resistance of 25mOhm maximum at 16A and 10V Vgs, contributing to efficient power handling with a maximum power dissipation of 66W (Tc). With a high junction temperature rating of 175°C, it is suitable for operation in challenging thermal environments. The TO-252-3 (DPAK) surface mount package facilitates integration into compact PCB designs. Key electrical parameters include a gate charge of 32nC (Max) at 10V and input capacitance of 1600pF (Max) at 25V. This MOSFET is commonly utilized in industrial power supplies, automotive systems, and power management solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta), 66W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252 (MP-3ZK) |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V |
Request a Quote
Clients Also Buy
HAT2172N-EL-E
MOSFET N-CH 40V 30A 8LFPAK
2SK3115-AZ
N-CHANNEL POWER MOSFET
2SK2935-92-E
N-CHANNEL POWER MOSFET
