NP22N055SLE-E1-AY
MOSFET N-CH 55V 22A TO252Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation NP22N055SLE-E1-AY is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component offers a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 22A at 25°C. The on-resistance (Rds On) is specified at a maximum of 37mOhm at 11A and 10V gate drive. Key parameters include a gate charge (Qg) of 23 nC maximum at 5V Vgs and an input capacitance (Ciss) of 1100 pF maximum at 25V Vds. The device supports a wide gate drive voltage range from 4.5V to 10V and has a maximum gate-source voltage (Vgs) of ±20V.
With a maximum junction temperature (Tj) of 175°C, the NP22N055SLE-E1-AY provides robust thermal performance, with power dissipation rated at 1.2W (Ta) and 45W (Tc). It is housed in a TO-252 (MP-3ZK) surface-mount package, commonly known as DPAK. This MOSFET is suitable for applications in automotive, industrial power supplies, and motor control systems. The device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta) |
| Rds On (Max) @ Id, Vgs | 37mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-252 (MP-3ZK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 25 V |