NP22N055SHE-E1-AY
MOSFET N-CH 55V 22A TO252Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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The Renesas Electronics Corporation NP22N055SHE-E1-AY is an N-Channel Power MOSFET designed for demanding applications. This component features a 55V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 22A at 25°C. With a low on-resistance (Rds On) of 39mOhm at 11A and 10V Vgs, it minimizes conduction losses. The device offers a maximum junction temperature of 175°C and supports a power dissipation of 1.2W (ambient) and 45W (case). It is supplied in a surface mount TO-252 (MP-3ZK) package, ideal for automated assembly. Key parameters include a gate charge (Qg) of 18nC and input capacitance (Ciss) of 890pF, both specified at 10V and 25V respectively. This MOSFET is commonly utilized in power management, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta) |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252 (MP-3ZK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 890 pF @ 25 V |