NP180N055TUJ-E1-AY
MOSFET N-CH 55V 180A TO263-7Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation NP180N055TUJ-E1-AY is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 55V drain-source voltage (Vdss) and a continuous drain current (Id) of 180A at 25°C (Tc). With a low on-resistance (Rds On) of 2.3mOhm at 90A and 10V Vgs, it minimizes conduction losses. The device is housed in a TO-263-7 (D2PAK) surface-mount package, facilitating automated assembly. Key electrical characteristics include a gate charge (Qg) of 230 nC (max) at 10V Vgs and input capacitance (Ciss) of 14250 pF (max) at 25V Vds. It operates at junction temperatures up to 175°C, with a maximum power dissipation of 348W (Tc). This MOSFET is suitable for use in industrial power supplies, automotive power management, and high-power motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 348W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14250 pF @ 25 V |