NP180N04TUJ-E1-AY
MOSFET N-CH 40V 180A TO263-7Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
This Renesas Electronics Corporation NP180N04TUJ-E1-AY is an N-Channel MOSFET designed for high-power applications. Featuring a 40V drain-source breakdown voltage and a continuous drain current capability of 180A at 25°C (Tc), this component offers a low on-resistance of 1.5mOhm maximum at 90A and 10V gate drive voltage. The device utilizes advanced MOSFET technology for efficient power switching. Its TO-263-7 (D2PAK) surface mount package facilitates straightforward integration into printed circuit boards, with a maximum junction temperature rating of 175°C. With a gate charge of 230 nC at 10V and input capacitance of 14250 pF at 25V, it is suitable for demanding power management solutions across various industrial sectors. The device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 348W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14250 pF @ 25 V |