NP180N04TUG-E1-AY
MOSFET N-CH 40V 180A TO263-7Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation NP180N04TUG-E1-AY is a surface-mount N-Channel Power MOSFET designed for high-current applications. This component features a Drain-to-Source Voltage (Vdss) of 40V and a continuous drain current (Id) capability of 180A at 25°C (Tc). The low on-resistance of 1.5mOhm at 90A and 10V gate drive voltage, coupled with a high continuous drain current rating, makes it suitable for demanding power management tasks. It offers a maximum junction temperature of 175°C and a significant power dissipation of 288W (Tc). The TO-263-7 (D2PAK) package ensures efficient thermal performance for surface-mount designs. Typical applications include industrial automation, electric vehicle power systems, and high-power switching supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 288W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 390 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 25700 pF @ 25 V |