NP161N04TUG-E1-AY
MOSFET N-CH 40V 160A TO263-7Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation NP161N04TUG-E1-AY is a 40V N-Channel Power MOSFET designed for demanding power applications. This component features a low on-resistance of 1.8mOhm at 80A and 10V Vgs, facilitating efficient power transfer. With a continuous drain current capability of 160A at 25°C (Tc) and a maximum junction temperature of 175°C, it is suitable for high-power switching and motor control. The TO-263-7 (D2PAK) surface mount package offers robust thermal performance with a power dissipation of 250W (Tc). Key parameters include a gate charge of 345 nC (max) at 10V and input capacitance of 20250 pF (max) at 25V. This device is utilized in industries such as automotive, industrial automation, and telecommunications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263-7 |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 345 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 20250 pF @ 25 V |
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