NP160N04TUJ-E1-AY
MOSFET N-CH 40V 160A TO263-7Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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The Renesas Electronics Corporation NP160N04TUJ-E1-AY is an N-Channel power MOSFET designed for high-current applications. Featuring a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 160A at 25°C (Tc), this component offers a low on-resistance of 2mOhm at 80A and 10V. Its surface mount TO-263-7 package facilitates efficient thermal management, with a maximum power dissipation of 250W at 25°C (Tc). The device operates at switching frequencies up to 175°C (TJ) and exhibits a gate charge (Qg) of 180 nC at 10V. This MOSFET is suitable for power supply units, electric vehicle control, and industrial automation systems where robust performance and thermal efficiency are critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10350 pF @ 25 V |