NP160N04TDG-E1-AY
MOSFET N-CH 40V 160A TO263-7Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation NP160N04TDG-E1-AY is an N-Channel power MOSFET designed for demanding applications. This surface mount device features a 40V drain-source breakdown voltage and a continuous drain current capability of 160A at 25°C ambient. The TO-263-7 package offers robust thermal performance, with a maximum power dissipation of 1.8W (Ta) and 220W (Tc). Key electrical characteristics include a low on-resistance of 2mOhm at 80A and 10V Vgs, and a gate charge of 270nC at 10V. Input capacitance (Ciss) is rated at a maximum of 15750pF at 25V. The operating temperature range extends to 175°C (TJ). This component is suitable for use in power conversion, automotive, and industrial systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Ta) |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 220W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 270 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 15750 pF @ 25 V |