NP110N055PUG-E1-AY
MOSFET N-CH 55V 110A TO263Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation's NP110N055PUG-E1-AY is an N-Channel power MOSFET designed for high-density power applications. This TO-263 packaged component offers a continuous drain current (Id) of 110A at 25°C (Tc) and a drain-to-source voltage (Vdss) of 55V. It features a low on-resistance of 2.4mOhm at 55A and 10V gate drive. The device boasts a maximum junction temperature of 175°C and a significant power dissipation capability of 288W (Tc). Key parameters include a gate charge (Qg) of 380 nC at 10V and input capacitance (Ciss) of 25700 pF at 25V. This surface-mount device, supplied in Tape & Reel, is suitable for demanding applications in automotive, industrial power supplies, and electric vehicle systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 55A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 288W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 380 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 25700 pF @ 25 V |
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