NP109N055PUJ-E1B-AY
MOSFET N-CH 55V 110A TO263Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation NP109N055PUJ-E1B-AY is an N-Channel Power MOSFET designed for demanding applications. This component features a 55 V drain-source voltage (Vdss) and a continuous drain current (Id) of 110 A at 25°C. The device exhibits a low on-resistance (Rds On) of 3.2 mOhm maximum at 55 A and 10 V gate-source voltage. With a maximum junction temperature of 175°C, it offers excellent thermal performance with a power dissipation of 1.8 W (Ta) and 220 W (Tc). The TO-263-3, D2PAK package facilitates efficient surface mounting. Key electrical characteristics include a gate charge (Qg) of 180 nC maximum at 10 V and input capacitance (Ciss) of 10350 pF maximum at 25 V. This MOSFET is suitable for use in power supply, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 55A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 220W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10350 pF @ 25 V |