N0600N-S17-AY
MOSFET N-CH 60V 30A TO220Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas Electronics Corporation N-Channel MOSFET, part number N0600N-S17-AY, offers a 60V drain-source voltage and a continuous drain current of 30A at 25°C. This through-hole component features a TO-220-3 Isolated Tab package with a maximum power dissipation of 2W (Ta) and 20W (Tc). The device exhibits a low Rds On of 36mOhm at 15A and 4.5V, with a gate charge of 29.8 nC at 10V and input capacitance of 1380 pF at 10V. Operating at a junction temperature up to 150°C, this MOSFET is suitable for applications in power management and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 15A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 20W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-220 |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 29.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1380 pF @ 10 V |
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