N0439N-S19-AY
MOSFET N-CH 40V 90A TO220Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas Electronics Corporation N-Channel Power MOSFET, part number N0439N-S19-AY, offers a 40V drain-source voltage and a continuous drain current of 90A at 25°C (Tc). This device features a low on-resistance of 3.3mOhm maximum at 45A and 10V gate-source voltage. The N0439N-S19-AY is housed in a standard TO-220-3 package for through-hole mounting and supports a maximum junction temperature of 175°C. Key parameters include a maximum gate charge of 102 nC at 10V and an input capacitance of 5850 pF maximum at 25V. Power dissipation is rated at 1.8W ambient and 147W case. This component is suitable for applications in the automotive and industrial sectors. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 147W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 102 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5850 pF @ 25 V |
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