N0300N-T1B-AT
MOSFET N-CH 30V 4.5A SC96-3Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation N-Channel MOSFET, part number N0300N-T1B-AT, offers a 30V drain-source voltage and 4.5A continuous drain current at 25°C. This device features a low on-resistance of 50mOhm maximum at 2A and 10V Vgs, with a gate-source voltage range of ±20V. The input capacitance (Ciss) is specified at 350 pF maximum at 10V Vds. Designed for surface mounting, it utilizes a SC-96-3, Thin Mini Mold package with a maximum power dissipation of 1.25W. Operating temperature range is up to 150°C. This component is suitable for applications in consumer electronics and industrial power management.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-96 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | SC-96-3, Thin Mini Mold |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 10 V |
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