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KGF12N05-400-SP

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KGF12N05-400-SP

MOSFET N-CH 5.5V 12A 6WLCSP

Manufacturer: Renesas Electronics Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Renesas Electronics Corporation KGF12N05-400-SP is an N-Channel Power MOSFET designed for demanding applications. This component features a 5.5V drain-source voltage (Vdss) and a continuous drain current (Id) of 12A at 25°C. The Rds On is specified at a maximum of 2.4mOhm at 12A and 4.5V gate-source voltage (Vgs). With a maximum power dissipation of 2.5W (Ta), this device is suitable for surface-mount installations within its 6-WLCSP (1.47x1.47) package. Key electrical characteristics include an input capacitance (Ciss) of 940pF at 5.5V and a gate charge (Qg) of 6nC at 3.5V. The threshold voltage (Vgs(th)) is a maximum of 800mV at 250µA. This component operates within a temperature range of -55°C to 150°C (TJ). Applications include automotive and industrial power management systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case6-SMD, No Lead
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Rds On (Max) @ Id, Vgs2.4mOhm @ 12A, 4.5V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Vgs(th) (Max) @ Id800mV @ 250µA
Supplier Device Package6-WLCSP (1.47x1.47)
Drive Voltage (Max Rds On, Min Rds On)3.5V, 4.5V
Vgs (Max)±5.5V
Drain to Source Voltage (Vdss)5.5 V
Gate Charge (Qg) (Max) @ Vgs6 nC @ 3.5 V
Input Capacitance (Ciss) (Max) @ Vds940 pF @ 5.5 V

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